Research Interests

	Sign In Sign-Up

My Research Interests

Home Page
Personal Data
Research Interest
Favorite Links
Photo Album
Contact Me
Sign My Guest Book

Research Interest Defects and impurities in Semiconductors Ion-beam modifiation and analysis of materials Amorphization and swelling in semiconductors Electronic and optoelectronic properties of disordered semiconductors
			Research problems investigated Deep level defects in ion implanted buried layers, defect migration, clustering and relaxation, defect evolution from point defect to extended defects Technological process induced defects in silicon Defect kinetics and annealing studies in semiconductors Defect and charge relaxation process in disordered semiconductors Photo-induced current transients and non-exponentiality in semi-insulating GaAs. Dopant and defect diffusion, impurity segregation, precipitation, extended defect formation in Si, Numerical simulation of device characteristics Crystalline to amorphous transition and optical properties of disordered silicon
List of Publications (partial) P. K. Giri and V. Raineri, G. Franzo, and E. Rimini Mechanism of Swelling in low-energy ion-implanted silicon Phys. Rev. B 65, 012110 (2001). P. K. Giri and Y. N. Mohapatra Evidence of metastability with athermal ionization from defect clusters in ion- damaged silicon Phys. Rev. B 65, 16561 (2000). P. K. Giri and Y. N. Mohapatra Capacitance transient spectroscopy models of coupled trapping kinetics among multiple defect states: Application to the study of trapping kinetics of defects in heavy-ion-damaged silicon Phys. Rev. B 62, 2496 (2000). P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Charge redistribution among defects in heavily damaged silicon. Phys. Rev. B 57, 14603 (1998). P. K. Giri, S. Coffa, V. and E. Rimini Evidence for small interstitial clusters as the origin of photoluminecscence W band in ion damaged silicon Appl. Phys. Lett. 78, 291 (2001). P. K. Giri and Y. N. Mohapatra Compensating defect in deep buried layers produced by MeV heavy ions in n-silicon. Appl. Phys. Lett. 71, 682 (1997). La Ferla, G. Galvagno, P. K. Giri, G. Franzo, E. Rimini Oxidation induced precipitation in Al implanted epitaxial silicon J. Appl. Phys. 88, 3988 (2000). P. K. Giri, S. Coffa, V. Raineri, and V. Privitera, G. Galvagno, A. La Ferla, and E. Rimini Photoluminescence and structural studies on extended defect evolution during high- temperature processing of ion-implanted epitaxial silicon J. Appl. Phys. 89, 4310 (2001). P. K. Giri and Y. N. Mohapatra Nonexponentiality in photoinduced current transients in undoped semi-insulating gallium arsenide. J. Appl. Phys. 78, 262 (1995). P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Electrically active defects due to end-of-ion range damage in silicon irradiated with MeV Ar+ ions. Nucl. Instr. & Meth. B 111, 285 (1996).). P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Electrically active defects in as-implanted deep buried layers in p-type silicon. J. Appl. Phys. 81, 260 (1997). P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Characterization of deep level defects in Si irradiated with MeV Ar+ ions using constant capacitance time analyzed transient spectroscopy. Bull. Mater. Sci. 20, 417 (1998).). P. K. Giri and Y. N. Mohapatra Electrical characterization of heavily damaged silicon : Evidence for defect migration and clustering. J. Appl. Phys. 84, 1901 (1998). P. K. Giri and Y. N. Mohapatra Unusual features in trap emission characteristics of heavily damaged silicon induced by MeV ion implantation. Semicond. Sci. Technol. 15, 985 (2000).). P. K. Giri and Y. N. Mohapatra Thermal stability of defet ccomplexes due to high dose MeV implantation in silicon. Mat. Sci. Engg. B 71, 327 (2000).). P. K. Giri, G. Galvagno, A. La Ferla, E. Rimini, S. Coffa, V. Raineri Formation and annealing of defects during high temperature processing of ion implanted epitaxial siliccon,: Role of dopant implants. Mat. Sci. Eng. B 71, 186 (2000).).). P. K. Giri, S. Tripura Sundari, G. Raghavan, B. K. Panigrahi, P. Magudapathy, K. G. M. Nair, and A. K. Tyagi Crystalline to amorphous transition and band structure evolution in ion damaged silicon studied by spectroscopic ellipsometry. J. Appl. Phys. 90, 659 (2001). ................................. Published contributions to academic Conferences/Workshops : 1. S. Agarwal, P. K. Giri and Y. N. Mohapatra Evidence for field dependence of emission from DX center. Proc. VIII International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec 1993. (Narosa , New Delhi, 1993). 2. P. K. Giri and Y. N. Mohapatra Time analyzed transient spectroscopy analysis of photo-induced current transients in semi-insulating gallium arsenide. Proc. National Conference on Recent Advances in Semiconductors, New Delhi, India, June 20-22, 1995. (Narosa, New Delhi, 1996) p156-161. 3. P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Electrically active defects due to end-of-ion range damage in silicon irradiated with MeV Ar+ ions. Proc. National conference on Recent Advances in Semiconductors, New Delhi, India, June 20-22, 1995. (Narosa, New Delhi, 1996) p162-167. 4. P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Characterization of deep level defects in silicon irradiated with MeV Ar+ ions using constant capacitance time analyzed transient spectroscopy. International Conf. On Defects in Condensed Media, Kalpakkam, India, 20-22 September, 1995. Bull. Mater. Sci. 20, (1997) p417-421. 5. P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Trapping characteristics of MeV ion implanted buried layers in silicon. Proc. DAE Solid State Physics Symposium, Mumbai, India, Dec 27-31, 1996. Vol. 39C (1996) p370. S. Dhar, P. K. Giri, T. Som, Y. N. Mohapatra and V. N. Kulkarni Ion induced synthesis of low resistive germanide phases. Proc. DAE Solid State Physics Symposium, Mumbai, India, Dec 27-31, 1996. Vol. 39C (1996) p374. P. K. Giri, S. Dhar, V. N. Kulkarni and Y. N. Mohapatra Defect level responsible for compensation in deep buried layers in n-type silicon. Proc. IX International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 16-20, 1997. (Narosa, New Delhi, 1997) p1072. Y. N. Mohapatra, S. Agarwal, and P. K. Giri Challenges and opportunities in studying deep defect dominated semiconductors : Emerging issues and case studies. IX International Workshop on Physics of Semiconductor Devices, New Delhi, India, Dec. 16-20, 1997. (Narosa, New Delhi, 1997) p470. 9. P. K. Giri Capacitance based studies of defects in deep buried layers produced by MeV heavy ions in silicon. Proc. DAE Solid State Physics Symposium, Cochin, India, Dec 27-31, 1997. Vol. 40C (1997) p14. 10. Y. N. Mohapatra and P. K. Giri Charge redistribution and defect relaxation in heavily damaged silicon studied using time analyzed transient spectroscopy. MRS (USA) Spring Meeting, San Francisco, USA, April 1998. MRS Proc., Vol. 510 (1998) . 11. Y. N. Mohapatra and P. K. Giri Evidence for defect migration and clustering in MeV heavy ion damaged silicon. MRS (USA) Spring Meeting, San Francisco, USA, April 1998. MRS Proc., Vol. 510 (1998) . For Copies of Preprints and Additional Information: (pravat_g@yahoo.com) Back to Home Page Add your link here Constantly Under Construction!!!